Intellectual property
It does not begin at an architecture diagram. It begins with how a resistive state is written into an IGZO thin film, and continues, layer by layer, up to a neural network whose thresholds and weights are both set in hardware.
United States and Europe
Currently pending
Pre-grant and lapsed, listed in full
Terms running to 2039–2041
Public reporting describes the portfolio as 30+ patents; that figure also counts counterparts filed in Japan, Taiwan and under the PCT, which are not listed individually here. Everything else is: all 25 US and European filings on the public record, including pre-grant publications and the two applications that lapsed. Legal status was verified against the register in August 2026. Every patent shown as granted is in force with maintenance fees current.
Cornerstones
One for the material, one for the array built from it, one for the network built from those. Everything else in the portfolio extends or defends these.
US 12,437,809 B2
Granted
The device patent underneath everything else. A planar IGZO resistive element with both contacts in the same plane, programmed by localised thermal treatment through voltage sweeps and read non-destructively with a low-voltage pulse.
Inventors: Viorel-Georgel Dumitru, Cristina Besleaga Stan, Alin Velea, Aurelian-Cătălin Galca
US 12,069,870 B2
Granted
The crossbar patent. IGZO thin-film transistors combined with IGZO resistive synapses, each holding an established resistance value. The array can be made fully transparent and integrated into the display of a portable device.
Inventors: Viorel-Georgel Dumitru, Cristina Besleaga Stan, Alin Velea, Aurelian-Cătălin Galca
US 2024/0428058 A1
Pending
Layers of artificial neurons whose activation thresholds are adjusted electronically, with memristors providing the weighted connections between them, both the thresholds and the weights are set during training.
Inventors: Andrei Iliescu, Elena-Adelina Duca, Viorel-Georgel Dumitru
The register
Every US and European filing on the public record, live or not, each linked to its own specification. Grants first, then applications under examination, then the pre-grant publications and the two that lapsed.
US 12,437,809 B2
Granted
The device patent underneath everything else. A planar IGZO resistive element with both contacts in the same plane, programmed by localised thermal treatment through voltage sweeps and read non-destructively with a low-voltage pulse.
US 12,069,870 B2
Granted
The crossbar patent. IGZO thin-film transistors combined with IGZO resistive synapses, each holding an established resistance value. The array can be made fully transparent and integrated into the display of a portable device.
EP 3588594 B1
Granted
The European grant on the core device, maintained across Germany, France, Italy, the Netherlands, the Nordics and the Baltics among others. Those are the jurisdictions where the automotive and industrial customers are.
US 11,705,198 B2
Granted
Continuation covering the voltage generator coupled to the coplanar contacts, applying thermal treatment to set the element’s resistance.
US 11,460,427 B2
Granted
A polyaniline emeraldine doped with sulfonated nanocellulose, electrospun onto interdigitated electrodes as the sensing layer of a chemiresistive humidity sensor.
US 11,455,258 B2
Granted
Encryption keys generated independently on two devices without the key ever being transmitted: identical setting and reading voltages applied to matched memristors yield the same character string at both ends, with the parameters sent over a second channel.
US 11,386,953 B2
Granted
The phase-change variant: a resistive layer between two contacts, thermally treated after fabrication to initiate crystallisation and open up a large number of stable resistance states.
US 11,356,422 B2
Granted
Generalises the key-agreement scheme to any device with non-linear I-V characteristics, a physical unclonable function on both the sender and the receiver side.
Families
How a resistive state is written into an IGZO thin film and read back without disturbing it. This is the layer nobody can design around by writing better software.
Crossbar organisation: thin-film transistors selecting resistive synapses, in a structure transparent enough to sit behind a display.
Turning a passive matrix of conductances into a machine that classifies. Artificial neurons, trainable thresholds, and recognition built from paired arrays.
Protecting the device and the traffic around it, including key generation that exploits the physical variability of memristors rather than a stored secret.
Strategy
It starts at the material and ends at a trainable network. Owning the device and the array together is what allows the compiler to assume behaviour a fabless competitor would have to negotiate with a foundry.
The founding filings predate the current wave of interest in analogue in-memory compute. Five US patents now continue from the first device application, the most recent filed in September 2025, and the granted terms run to between 2039 and 2041.
The core patents name the company’s own device physicists and materials scientists. The IP and the lab are the same effort, not an acquisition.
The engine can be licensed as IP into a partner’s own silicon. Freedom-to-operate discussions start with the commercial team.